Mechanical and adhesion properties of Al/AlN multilayered thin films

Citation
Jh. Lee et al., Mechanical and adhesion properties of Al/AlN multilayered thin films, SURF COAT, 133, 2000, pp. 220-226
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
133
Year of publication
2000
Pages
220 - 226
Database
ISI
SICI code
0257-8972(200011)133:<220:MAAPOA>2.0.ZU;2-E
Abstract
An investigation was conducted on the mechanical properties of compositiona lly modulated Al/AlN thin films deposited by r.f. magnetron sputtering on S i(100) substrates. The films were made to have modulation periods ranging f rom 40 to 200 nm. The volume fraction of Al was varied from 0.125 to 0.625 for films with the minimum modulation period of 40 nm, but it was set to 0. 5 otherwise. Hardness and adhesion of the deposited films were examined by nanoindentation and scratch test method, respectively. Residual stress of m onolithic Al and AW films with varying thickness and multilayered films was also measured by a conventional beam-bending technique. As compared with a monolithic AlN film, films of various modulation periods with the Al volum e fraction of 0.5 were found to have lower hardness. On the other hand, hig h hardness comparable to and 12% higher than that of monolithic AN him was registered for films that have the modulation period of 40 nm and the Al vo lume fraction 0.125 and 0.25, respectively. Al the modulated films were fou nd to have critical loads almost twice as high as that of a single AlN film , except the one with the lowest Al volume fraction. From the scratch test, a cohesive failure was observed for films with alternating layers in resid ual stress state of opposite signs whereas an adhesive failure was noticed otherwise. These observations indicate that a load-carrying capacity of a m odulated film depends not only on the modulation period and individual laye r thickness but on the residual stress states of alternating layers. (C) 20 00 Elsevier Science B.V. All rights reserved.