Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon

Lateral growth crystallization of hydrogenated amorphous silicon with singl e and multiple pulse excitation using a Nd:YAG laser at a wavelength of 532 nm and a 3 ns pulse width at a repetition of 10 Hz is shown. With single p ulse crystallization, large grain sizes of the order of 1 mum were obtained with an energy density > 400 mJ/cm(2), and these have been studied using t ransmission electron microscopy (TEM) and atomic force microscopy. We show that, by using extremely short (3 ns) multiple pulse excitation of signific antly lower powers (< 150 mJ/cm(2)), than that used to crystallize amorphou s silicon with single pulse excitation, a uniform growth of crystalline gra ins is observed. TEM gives evidence for lateral grain growth with multiple pulse crystallization at low energies. We suggest that a "super sequential lateral growth" mechanism is occurring. (C) 2001 American Institute of Phys ics.