Electrical properties of p-type GaN : Mg codoped with oxygen

Authors
Korotkov, RY Gregie, JM Wessels, BW
Citation
Ry. Korotkov et al., Electrical properties of p-type GaN : Mg codoped with oxygen, APPL PHYS L, 78(2), 2001, pp. 222-224
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
2
Year of publication
2001
Pages
222 - 224
Database
ISI
SICI code
0003-6951(20010108)78:2<222:EPOPG:>2.0.ZU;2-Z
Abstract
Codoping of p-type GaN with Mg and oxygen was investigated. By codoping wit h oxygen the hole concentrations increased to 2 x 10(18) cm(-3) at 295 K, a n order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ohm cm upon oxygen codoping. Variab le temperature Hall effect measurements indicated that the acceptor activat ion energy decreases from 170 +/-5 meV in Mg-doped films to 135 +/-5 meV up on oxygen doping. The higher hole concentration results in part from a decr ease in the ionization energy of the acceptor. (C) 2001 American Institute of Physics.