Pseudodonor nature of the D-I defect in 4H-SiC

Authors
Storasta, L Carlsson, FHC Sridhara, SG Bergman, JP Henry, A Egilsson, T Hallen, A Janzen, E
Citation
L. Storasta et al., Pseudodonor nature of the D-I defect in 4H-SiC, APPL PHYS L, 78(1), 2001, pp. 46-48
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
1
Year of publication
2001
Pages
46 - 48
Database
ISI
SICI code
0003-6951(20010101)78:1<46:PNOTDD>2.0.ZU;2-Y
Abstract
We use the recent findings about the pseudodonor character of the D-I defec t to establish an energy-level scheme in the band gap for the defect, predi cting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D-I defec t indeed is correlated to such a hole trap. In addition, we show that the D -I defect is not correlated to the Z(1/2) electron trap, in contrast to wha t was previously reported. (C) 2001 American Institute of Physics.