Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices

Authors
Koley, B King, O Johnson, FG Saini, SS Dagenais, M
Citation
B. Koley et al., Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices, APPL PHYS L, 78(1), 2001, pp. 64-66
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
1
Year of publication
2001
Pages
64 - 66
Database
ISI
SICI code
0003-6951(20010101)78:1<64:AAROOS>2.0.ZU;2-3
Abstract
An accelerated oxidation process has been demonstrated in InAs/AlAs-based s train-compensated ultrashort-period superlattices grown on an InP substrate . It has been observed that the uniformity as well as the rate of the oxida tion process in the strain-compensated short-period superlattice depends on the composition of the surrounding semiconductor layers. A suitable layer structure has been designed to obtain accelerated and reproducible oxidatio n rate in InP based optoelectronic devices. (C) 2001 American Institute of Physics.