Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy

Citation
Ha. Mckay et al., Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy, APPL PHYS L, 78(1), 2001, pp. 82-84
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
1
Year of publication
2001
Pages
82 - 84
Database
ISI
SICI code
0003-6951(20010101)78:1<82:AONAIG>2.0.ZU;2-8
Abstract
The pair distribution function of nitrogen atoms in GaAs0.983N0.017 has bee n determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (1 (1) over bar0) surface are imag ed. A modest enhancement in the number of nearest-neighbor pairs particular ly with [001] orientation is found, although at larger separations the dist ribution of N pair separations is found to be random. (C) 2001 American Ins titute of Physics.