High-spatial-resolution semiconductor characterization using a microwave eddy current probe

Citation
Cc. Watson et Wk. Chan, High-spatial-resolution semiconductor characterization using a microwave eddy current probe, APPL PHYS L, 78(1), 2001, pp. 129-131
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
1
Year of publication
2001
Pages
129 - 131
Database
ISI
SICI code
0003-6951(20010101)78:1<129:HSCUAM>2.0.ZU;2-A
Abstract
We report on the design and application of a high-resolution microwave eddy current probe that consists of a microfabricated coil with inner and outer widths of 6 and 20 mum, respectively, integrated with a coplanar waveguide . In addition to improved spatial resolution, we implement a stub-matching technique, which enables us to make high-sensitivity measurements. We demon strate the utility of our device by measuring the minority-carrier lifetime in a thin In0.53Ga0.47As film. Although our present demonstration does not allow us to reuse the sample, with minor changes this technique can be mad e noncontact and nondestructive. (C) 2001 American Institute of Physics.