Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap

Citation
M. Notomi et al., Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap, APPL PHYS L, 77(26), 2000, pp. 4256-4258
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
26
Year of publication
2000
Pages
4256 - 4258
Database
ISI
SICI code
0003-6951(200012)77:26<4256:DATPCH>2.0.ZU;2-5
Abstract
We propose a three-dimensional photonic crystal structure having a wide ful l photonic band gap in the optical regime, which can be fabricated by an al ternating-layer deposition and etching (drilling) process. This fabrication process is much simpler than that previously reported. The combination of current lithographic technology and autocloning bias-sputtering deposition is a promising way of realizing these photonic crystals. (C) 2000 American Institute of Physics. ([)S0003-6951(00)03451-3].