Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters

We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quan tum-well (QW) structures grown adjacent to each other on a single InP subst rate. Each structure emits at a different wavelength range spanning the vis ible range. Stripe and square-shaped QW structures of different emission wa velengths, with lateral dimensions between 15 and 60 mum, were deposited se quentially by shadow mask selective area epitaxy (SAE) steps. Conventional and microphotoluminescence measurements were used to characterize the patte rned QWs. They exhibit well-defined excitonic emission in the red, yellow, and green regions of the visible spectrum. This result demonstrates the fea sibility of fabricating integrated full-color light emitting diode and lase r-based display elements and white light sources using the ZnCdMgSe materia l system and shadow mask SAE. (C) 2000 American Institute of Physics. [S000 3-6951(00)04149-8].