Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1 degrees towards < 211 > InP substrates

High-quality bulk InGaAs and InAlAs/InGaAs heterostructures have been grown on InP substrates with different orientation using molecular-beam epitaxy. It was found that the electrical and structural properties were strongly d ependent on growth temperature and substrate misorientation. The electrical and structural properties of the film were investigated by high-resolution x-ray diffraction, Nomarski microscope, and Hall measurements. Full-width at half-maximum of 380 arcsec for bulk InGaAs on (111)B and 70 arcsec on (1 11)B misoriented by 1 degrees towards < 211 > InP substrates were measured by x-ray diffraction. The room temperature electron Hall mobility for bulk InGaAs of 5100 cm(2)/V s, doped with Si concentration at the mid-10(17)/cm( 3), and two-dimensional electron gas mobility of 11 200 cm(2)/V s, and shee t density of 3.0x10(12)/cm(2) for InAlAs/InGaAs heterostructures on (111)B misoriented by 1 degrees towards < 211 > InP substrates were achieved. (C) 2000 American Institute of Physics. [S0003-6951(00)03351-9].