Spherical SiGe quantum dots prepared by thermal evaporation

Authors
Liao, YC Lin, SY Lee, SC Chia, CT
Citation
Yc. Liao et al., Spherical SiGe quantum dots prepared by thermal evaporation, APPL PHYS L, 77(26), 2000, pp. 4328-4329
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
26
Year of publication
2000
Pages
4328 - 4329
Database
ISI
SICI code
0003-6951(200012)77:26<4328:SSQDPB>2.0.ZU;2-N
Abstract
SiGe alloy quantum dots with spherical shape have been synthesized by the t hermal evaporation method. The shape and structure of these dots have been investigated. Transmission electron microscopy images show that they have a n average diameter of about 15 nm, and their cores are crystalline. The com position of these dots could be extracted from the Raman peak position of t he silicon TO phonon. (C) 2000 American Institute of Physics. [S0003- 6951( 00)02752-2].