Magnetoluminescence studies in InGaP alloys

We have measured both the diamagnetic shift and the linewidth of an exciton ic transition in In0.48Ga0.52P as a function of magnetic field up to 22 T a t 4.2 K using photoluminescence spectroscopy. The sample was grown on a GaA s substrate using low-pressure metalorganic vapor phase epitaxy at 700 degr eesC. The substrate was misoriented by 15 degrees from [001] towards [011] direction. We find that the variations of both the diamagnetic shift and th e linewidth with magnetic field are about one half of those reported earlie r [E. D. Jones, R. P. Schneider, Jr., S. M. Lee, and K. K. Bajaj, Phys. Rev . B 46, 7225 (1992)] in a In0.48Ga0.52P sample grown with only 2 degrees mi sorientation and also those calculated using a free exciton model. We sugge st that this behavior may be due to the fact that our sample was grown with much larger misorietation. We have calculated both of these variations usi ng a model in which we assume that in this sample the hole is completely lo calized and find an excellent agreement with the observed data. (C) 2000 Am erican Institute of Physics. [S0003-6951(00)02652-8].