Temperature dependence of current-voltage characteristics of Au/n-GaAs epitaxial Schottky diode

The influence of temperature on current-voltage (I-V) characteristics of Au /n-GaAs Schottky diode formed on n-GaAs epitaxial layer grown by metal orga nic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 x 10(16) cm(-3). The change in va rious parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the ra nge 80-300 K is presented, The variation of apparent Schottky barrier heigh t and ideality factor with temperature has been explained considering later al inhomogeneities in the Schottky barrier height in nanometer scale length s at the metal-semiconductor interface.