Modified growth of cadmium selenide single crystals from the vapor phase and quality characterization

High quality size of CdSe single crystal of large size was obtained by the modified growth technique, i.e. horizontal vapor phase located point nuclea tion (HVPLPN). The particular shape of the growth ampoule and less temperat ure gradients (7-8 K/cm) in the growth interface was used for crystal growt h. As-grown CdSs crystal was characterized by varied methods including x-ra y diffraction, SEM and energy dispersive analyzer of x-ray (EDAX) etc. Two cleavage facts of the (100) and the (110) was found. The crystal has a stoi chiometry ratio Cd : Se - 0.99 : 1 and the density of dislocation is in the range of 10(4)-10(3)/cm(2) and the resistivity is about 10(7) Omega cm. Th e results demonstrated that the quality of the as-grown crystal is good for applications. Therefore the modified growth technique (HVPLPN) is a promis ing convenient new method for the growth of high quality CdSe single crysta ls.