Space-time self-organization of the vacancy-impurity system of MBE-grown epitaxial (110)Si layers

The formation of nonuniform distributions of doping impurities (gallium or boron) in MBE-grown epitaxial (110)Si layers has been predicted. The effect is caused by vacancy self-organization and is associated with the formatio n of vacancy complexes consisting of one surface and two volume vacancies. The model suggested takes into account the impurity capture by kinks and su rface vacancies and also the transitions of atoms between the surface and t he bulk of crystal layers with due regard for the effect of an electric fie ld induced by impurity ions. The spatial vacancy-impurity structures are ca lculated numerically (C) 2000 MAIK "Nauka/Interperiodica".