Effect of duration of thermal diffusion of boron on silicon structure studied by triple-crystal X-ray diffractometry

Authors
Petrakov, AP Shilov, SV Zainulin, GG
Citation
Ap. Petrakov et al., Effect of duration of thermal diffusion of boron on silicon structure studied by triple-crystal X-ray diffractometry, CRYSTALLO R, 45(6), 2000, pp. 1013-1017
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
45
Issue
6
Year of publication
2000
Pages
1013 - 1017
Database
ISI
SICI code
1063-7745(200011/12)45:6<1013:EODOTD>2.0.ZU;2-3
Abstract
The effect of thermal diffusion of boron on the structure of subsurface sil icon layers has been studied by the method of triple-crystal X-ray diffract ometry. The deformation and the static Debye-Waller factor profiles are det ermined. The dependence of the structure parameters on diffusion duration i s discussed. (C) 2000 MAIK "Nauka/Interpeliodica".