Ku-band 20-W GaAsPHEMT high-power amplifiers using power splitting and combining circuits with asymmetric structure

Citation
Y. Tarui et al., Ku-band 20-W GaAsPHEMT high-power amplifiers using power splitting and combining circuits with asymmetric structure, ELEC C JP 2, 84(1), 2001, pp. 56-65
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
84
Issue
1
Year of publication
2001
Pages
56 - 65
Database
ISI
SICI code
8756-663X(2001)84:1<56:K2GHAU>2.0.ZU;2-B
Abstract
Power splitting and combining circuits with asymmetric structure characteri zed by unequal linewidths of split lines and a splitting point shifted from the center have been:developed. Amplitude and phase splitting characterist ics comparable to those of conventional splitting circuits have been achiev ed. This eight-way power splitting/combining circuit with asymmetric struct ure has been used td-develop a Ku-band power amplifier. Calculations and ex periments show that both the gain and power of the Ku-band amplifier with a symmetric structure are superior to those of conventional high-power amplif iers with symmetric structure. (C) 2000 Scripta Technica.