Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 mu m

Authors
Quochi, F Cunningham, JE Dinu, M Shah, J
Citation
F. Quochi et al., Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 mu m, ELECTR LETT, 36(25), 2000, pp. 2075-2076
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
25
Year of publication
2000
Pages
2075 - 2076
Database
ISI
SICI code
0013-5194(200012)36:25<2075:RTOOGQ>2.0.ZU;2-#
Abstract
Room temperature pulsed lasing at 1.29 mum in an optically pumped GaAsSb/Ga As quantum well VCSEL on a GaAs substrate is reported. This is the longest wavelength VCSEL reported in this material system.