Citation
G. Masini et al., Germanium on silicon pin photodiodes for the near infrared, ELECTR LETT, 36(25), 2000, pp. 2095-2096
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
25
Year of publication
2000
Pages
2095 - 2096
Database
ISI
SICI code
0013-5194(200012)36:25<2095:GOSPPF>2.0.ZU;2-#
Abstract
Novel Ge on silicon pin photodetectors have been fabricated and characteris
ed. The devices, designed by considering the defects at the Ge/Si interface
, exhibit overall performances that are among the best available, with shor
t-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below
20mA/cm(2) and response times shorter than 800ps.