On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices

Authors
Royo, P Stanley, RP Ilegems, M Streubel, K Gulden, KH
Citation
P. Royo et al., On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices, ELECTR LETT, 36(25), 2000, pp. 2106-2108
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
25
Year of publication
2000
Pages
2106 - 2108
Database
ISI
SICI code
0013-5194(200012)36:25<2106:ODOISS>2.0.ZU;2-W
Abstract
A simple method for determining the intrinsic spontaneous spectrum of verti cal cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison wit h numerical simulations. It is accurate, nondestructive and easy to impleme nt.