Citation
S. Pal et al., Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices, ELECTR LETT, 36(24), 2000, pp. 2044-2046
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
36
Issue
24
Year of publication
2000
Pages
2044 - 2046
Database
ISI
SICI code
0013-5194(20001123)36:24<2044:GFAHGD>2.0.ZU;2-K
Abstract
Dielectric films from gadolinium gallium garnet single crystal were deposit
ed by electron-beam evaporation on strained Si1-x/Ge-x/Si layers at 300K to
form high-le metal-insulator-semiconductor (MIS) structures. The p-Si0.74G
e0.26/Ga2O3(Gd2O3) interface properties were studied through C-V and G-V me
asurements of the MIS capacitors, which showed encouraging electrical chara
cteristics with oxide k = 12.3 and minimum interface state density D-it of
4.8 x 10(11) cm(-2)eV(-1).