Synchrotron radiation X-ray grazing incident diffraction (GID) method was d
eveloped based on the five-circle diffractometer in the Diffuse Scattering
Station at Beijing Synchrotron Radiation Facility. The lateral strain induc
ed by the Ge/Si quantum dotswas measured successfully, which showed the cap
ability of the GID method in measuring weak signals from surface structures
. The results showed that the formation of Ge/Si quantum dots caused both t
he lateral expansion-strain and contraction-strain in the surface layer of
Si(001) substrate.