DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths

Authors
Dumka, DC Cueva, G Hier, H Aina, OA Adesida, I
Citation
Dc. Dumka et al., DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths, IEEE ELEC D, 22(1), 2001, pp. 5-7
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
1
Year of publication
2001
Pages
5 - 7
Database
ISI
SICI code
0741-3106(200101)22:1<5:DARCOD>2.0.ZU;2-F
Abstract
Depletion-mode doped-channel field effect transistors (DCFETs) using AlAs0. 56Sb0.44/In0.53Ga0.47As heterostructure with multiple channels grown by mol ecular beam epitaxy (MBE) on InP substrate are presented. Devices with gate -lengths ranging from 0.2 mum to 1.0 mum have been fabricated. Three doped In0.53Ga0.47As channels separated by undoped AlAs0.56Sb0.44 layers are used for the devices. The devices exhibit unity current gain cut-off frequencie s typically between 18 GHz and 73 GHz and corresponding maximum oscillation frequencies typically between 60 GHz and 160 GHz. The multiple channel app roach results in wide linearity of de and RF performance of the device.