M. Noguchi et al., Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs, IEEE ELEC D, 22(1), 2001, pp. 32-34
The dependence of threshold voltage on silicon-on-insulator (SOI) thickness
is studied on fully-depleted SOI MOSFETs, and, for this purpose, back-gate
oxide thickness and back gate voltage are varied. When the back gate oxide
is thinner than the critical thickness dependent on the back gate voltage,
the threshold voltage has a minimum in cases where the SOI film thickness
is decreased, because of capacitive coupling between the SOI layer and the
back gate. This fact suggests that threshold voltage fluctuations due to SO
I thickness variations are reduced by controlling the back gate voltage and
thinning the back gate oxide.