Characterization and minimization of flicker in silicon light valves

Citation
Hc. Huang et al., Characterization and minimization of flicker in silicon light valves, J APPL PHYS, 89(2), 2001, pp. 831-837
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
2
Year of publication
2001
Pages
831 - 837
Database
ISI
SICI code
0021-8979(20010115)89:2<831:CAMOFI>2.0.ZU;2-B
Abstract
We have performed systematic characterizations of flicker in silicon light valves. It was found that there were four conduction mechanisms accounting for the flicker. These four mechanisms were residual dc charge on the silic on surface, voltage holding capability of the liquid crystal cell, voltage holding capability of the silicon panel, and parasitic capacitor coupling o f the pixel. Major causes of these four mechanisms were identified. Solutio ns of flicker minimization were obtained for each mechanism. Among these so lutions, offset of common voltage was found very useful to compensate for r esidual dc charge and parasitic capacitor coupling. Frame rate multiplicati on was found very useful for the minimization of flicker due to low voltage holding capabilities of the liquid crystal cell and silicon panel. (C) 200 1 American Institute of Physics.