Ionized metal physical vapor deposition (IMPVD) is a process in which sputt
ered metal atoms from a magnetron target are ionized by a secondary plasma
before depositing onto the substrate. The sputtered metal atoms and neutral
ized ions reflected from the target have higher kinetic energies than the b
uffer gas and so are not in thermal equilibrium. These nonthermal (inflight
) species can dominate the total metal species density at low pressures (<5
mTorr). As a result, electron impact of the inflight species may significa
ntly contribute to excitation and ionization. To investigate these processe
s, a model was developed to include the inflight electron impact excitation
(IEIE) of sputtered species during IMPVD. Results for Cu IMPVD indicate th
at the predicted Cu+ density at low pressure (2 mTorr) significantly increa
sed when IEIE was taken into account. As the pressure increases, the rate o
f thermalization increases and the importance of IEIE decreases. (C) 2001 A
merican Institute of Physics.