Raman investigation of ion beam synthesized beta-FeSi2

Authors
Birdwell, AG Glosser, R Leong, DN Homewood, KP
Citation
Ag. Birdwell et al., Raman investigation of ion beam synthesized beta-FeSi2, J APPL PHYS, 89(2), 2001, pp. 965-972
Citations number
65
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
2
Year of publication
2001
Pages
965 - 972
Database
ISI
SICI code
0021-8979(20010115)89:2<965:RIOIBS>2.0.ZU;2-M
Abstract
The Raman spectra of ion beam synthesized (IBS) beta -FeSi2 are investigate d and evidence for the presence of a net tensile stress is presented. Possi ble origins of the observed stress are suggested and a simple model is prop osed in order to calculate a value of the observed stress. A correlation be tween the tensile stress, the nature of the band gap, and the resulting lig ht emitting properties of IBS beta -FeSi2 is suggested. (C) 2001 American I nstitute of Physics.