Influence of deep level impurities on modulation response of InGaP light emitting diodes

The effect of deep level impurities on static and dynamic properties of InG aP-based light emitters grown by all-solid-source molecular-beam epitaxy is analyzed. The improvement of the output power and the decrease in modulati on bandwidth induced by the burn-in process are explained by the recombinat ion enhanced annealing of one deep level trap. This assumption is experimen tally proven through comparison of small-signal analysis for resonant cavit y light-emitting diodes operating at 650 nm and deep level transient spectr oscopy results. Finally, the concentration of the midgap recombination cent er N3 in the active region is shown to play an important role in the perfor mance of the InGaP devices. (C) 2001 American Institute of Physics.