Mv. Fischetti, Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures, J APPL PHYS, 89(2), 2001, pp. 1232-1250
In metal-oxide-semiconductor structures with polycrystalline Si gates, elec
trons in the inverted channel of the substrate scatter with electrons in th
e gate via long-range Coulomb interactions. For thin oxides, these interact
ions can cause a significant transfer of momentum from the channel to the g
ate, thus reducing the effective mobility of the two-dimensional electron g
as in the substrate. We present calculations of the dispersion of the inter
face plasmons in poly-Si/SiO2/Si structures, comparing the results obtained
in the long-wavelength limit to those obtained using the random-phase appr
oximation. Employing the former model, we compute the effect of plasmon sca
ttering on the effective electron mobility in Si inversion layers. We find
a significant reduction of the mobility for oxides thinner than about 3 nm.
(C) 2001 American Institute of Physics.