Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots

We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (wit h Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x -ray absorption fine structure (EXAFS) in order to study the local structur es formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnA s coexisted, while the majority of the Mn atoms were substituted in the In- sites of InAs in (In, Mn)As quantum dots. It is considered that different g rowth modes for the thin layer and the quantum dots affect the local struct ures. (C) 2001 American Institute of Physics.