Lattice deformation and interdiffusion of InAs quantum dots on GaAs(100)

InAs quantum dots (QDs) on GaAs(100) grown by molecular-beam epitaxy were s tructurally characterized by ion channeling. Lattice deformation of the InA s QDs and diffusion of Ga atoms into InAs QDs were clearly observed to depe nd strongly on the InAs coverage. It was revealed that the diffusion is sig nificantly enhanced when the InAs coverage is changed from 1.53 to 1.71 mon olayer. During this change, lattice deformation was reduced while the avera ge size (base diameter) of dots was decreased. These phenomena suggest that some growth process change occurred. (C) 2001 American Institute of Physic s.