Thermodynamic analysis of hole trapping in SiO2 films on silicon

Authors
Boureau, G Carniato, S Capron, N Garapon, J Poumellec, B
Citation
G. Boureau et al., Thermodynamic analysis of hole trapping in SiO2 films on silicon, J APPL PHYS, 89(1), 2001, pp. 165-168
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
1
Year of publication
2001
Pages
165 - 168
Database
ISI
SICI code
0021-8979(20010101)89:1<165:TAOHTI>2.0.ZU;2-7
Abstract
A thermodynamic approach based on the existence of a local equilibrium is u sed to evaluate the temperature dependence of the number of defects respons ible for hole trapping (oxygen vacancies transformed into E' centers) near the Si-SiO2 interface. This approach eliminates the discrepancies between t heoretical calculations of the formation energy of oxygen vacancies and hol e trapping modeling. (C) 2001 American Institute of Physics.