F. Priolo et al., Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals, J APPL PHYS, 89(1), 2001, pp. 264-272
In this article the luminescence properties of Si nanocrystals (nc) formed
by plasma enhanced chemical vapor deposition and their interaction with Er
ions introduced by ion implantation are investigated in detail. Si nc with
different size distributions and densities were produced and all show quite
intense room temperature luminescence (PL) in the range 700-1100 nm. It is
shown that the time-decay of the luminescence follows a stretched exponent
ial function whose shape tends towards a single exponential for almost isol
ated nc. This suggests that stretched exponential decays are related to the
energy transfer from smaller towards larger nc. Indeed, by comparing sampl
es with similar nc size distributions, but with very different nc densities
, it is demonstrated that the PL has a quite strong redshift in the high de
nsity case, demonstrating a clear energy redistribution within the sample.
Excitation cross sections have been measured in all samples yielding a valu
e of similar to1.8 x 10(-16) cm(2) for isolated nc excited with 2.54 eV pho
tons. This effective excitation cross section is shown to increase by a fac
tor of 4 in interacting nc as a result of the energy transfer within the sa
mple. When Er ions are introduced in these samples a strong nc-Er interacti
on sets in and the energy is preferentially transferred from the nc to the
Er ions. The nc-related luminescence is quenched and the Er-related lumines
cence at 1.54 mum appears. The effective excitation cross section of Er ion
s through Si nc has been determined to be similar to1.1 x 10(-16) cm(2). Th
is number resembles the excitation cross section of nc themselves demonstra
ting that the coupling is extremely strong. Moreover, by increasing the Er
content the effective excitation cross section is seen to increase. In the
same concentration range the Er lifetime decreases demonstrating that "conc
entration quenching" effects, with the energy transferred among Er ions, ar
e setting in. These Er-Er interactions are responsible for the effective in
crease of the cross section. However, since the increase in the cross secti
on is related to a simultaneous decrease in lifetime the net effect for the
luminescence efficiency is negative. The best Er content to take advantage
of the sensitizer action of Si nc avoiding the detrimental Er-Er interacti
ons has been determined to be similar to2 x 10(20)/cm(3). These data are pr
esented and their implications discussed. (C) 2001 American Institute of Ph
ysics.