Effects of atomistic defects on coherent electron transmission in Si nanowires: Full band calculations

Citation
Yj. Ko et al., Effects of atomistic defects on coherent electron transmission in Si nanowires: Full band calculations, J APPL PHYS, 89(1), 2001, pp. 374-379
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
1
Year of publication
2001
Pages
374 - 379
Database
ISI
SICI code
0021-8979(20010101)89:1<374:EOADOC>2.0.ZU;2-P
Abstract
The effects of atomistic imperfections on coherent electron transmission in Si[100] quantum wires a few nanometers wide are investigated using a tight -binding Green function approach. We find a significant suppression in the electron transmission by atomistic imperfections in these extremely narrow wires. Multiple conductance peaks or oscillations can be easily developed b y the presence of only several vacancy defects, which can lead to a finite zero-conductance region around the subband edge. Several substitutional def ects and surface dangling bonds generally result in decreased, oscillatory conductances with more significant effects found in narrower wires. (C) 200 1 American Institute of Physics.