Numerical model for organic light-emitting diodes

Citation
E. Tutis et al., Numerical model for organic light-emitting diodes, J APPL PHYS, 89(1), 2001, pp. 430-439
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
1
Year of publication
2001
Pages
430 - 439
Database
ISI
SICI code
0021-8979(20010101)89:1<430:NMFOLD>2.0.ZU;2-#
Abstract
An extensive numerical model recently developed for the multilayer organic light-emitting diode is described and applied to a set of real devices. The model contains a detailed description of electrical contacts including dip olar layer formation, thermionic and tunneling injection, space charge effe cts, field dependent mobilities and recombination processes. The model is a pplied to simulate several single layer devices and the family of bilayer d evices made in our group. It provides insight into the energy level shifts, internal electric fields and charge distribution (and consequently recombi nation) throughout the device. Finally, the analysis is extended to the opt imization of bilayer device. (C) 2001 American Institute of Physics.