BRILLOUIN-SCATTERING STUDY OF EPITAXIAL INSE FILMS GROWN ON THE SI(111)1X1-H SURFACE

Citation
V. Panella et al., BRILLOUIN-SCATTERING STUDY OF EPITAXIAL INSE FILMS GROWN ON THE SI(111)1X1-H SURFACE, Journal of physics. Condensed matter, 9(26), 1997, pp. 5575-5580
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
9
Issue
26
Year of publication
1997
Pages
5575 - 5580
Database
ISI
SICI code
0953-8984(1997)9:26<5575:BSOEIF>2.0.ZU;2-8
Abstract
Brillouin light scattering has been used to study the elastic properti es of an InSe film grown epitaxially on a hydrogen-terminated non-reco nstructed Si(lll) surface. Both generalized Rayleigh-Sezawa and Love a coustic modes have been revealed, and their velocity dispersions measu red as functions of the ratio between the film thickness and the acous tic wavelength. This enabled us to determine the complete set of InSe film elastic constants through a non-linear best-fitting procedure.