Fractal crystallization and nonlinear V-I behavior of Au/Ge bilayer film

Authors
Chen, ZW Zhang, SY Tan, S Hou, JG Zhang, YH Sekine, H
Citation
Zw. Chen et al., Fractal crystallization and nonlinear V-I behavior of Au/Ge bilayer film, J APPL PHYS, 89(1), 2001, pp. 783-785
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
1
Year of publication
2001
Pages
783 - 785
Database
ISI
SICI code
0021-8979(20010101)89:1<783:FCANVB>2.0.ZU;2-K
Abstract
The fractal formation and V-I behavior of the Au/Ge bilayer film have been investigated with a transmission electron microscope and by the two-probe c onfiguration method. The experimental results suggest that the Au/Ge bilaye r film, after the fractal crystallization, shows a nonlinear V-I behavior. This phenomenon was explained by the random tunneling junction model. (C) 2 001 American Institute of Physics.