High temperature mobility of CdTe

Citation
J. Franc et al., High temperature mobility of CdTe, J APPL PHYS, 89(1), 2001, pp. 786-788
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
1
Year of publication
2001
Pages
786 - 788
Database
ISI
SICI code
0021-8979(20010101)89:1<786:HTMOC>2.0.ZU;2-I
Abstract
The Hall mobility of electrons mu (H) is measured in CdTe in the temperatur e interval 450-1050 degreesC and defined Cd overpressure in near-intrinsic conditions. The strong decrease of mu (H) above 600 degreesC is reported. T he effect is explained within a model of multivalley conduction where both electrons in Gamma (1c) minimum and in L-1c minima participate. The theoret ical description is based on the solution of the Boltzmann transport equati on within the relaxation time approximation including the polar and acousti c phonon intravalley and intervalley scatterings. The Gamma (1c) to L-1c se paration DeltaE = 0.29-10(-4)T (eV) for the effective mass in the L valley m(L) = 0.35m(0) is found to best fit the experimental data. Such DeltaE is about four times smaller than it is predicted by first-principle calculatio ns. (C) 2001 American Institute of Physics.