We report Cu-63-Knight shift measurement on multilayered high-T-c cuprate o
xides that include inequivalent outer (OP) and inner (IP) CuO2 planes in a
unit cell with number of planes n = 3-5. Using an experimental relation bet
ween the spin part of Knight shift (K-s) and the carrier concentration (N-h
) reported in n = 1 and 2 cuprates, the local carrier concentrations Nh(OP)
in the OP and Nh(IP) in the IP have been deduced. We have found that Nh(OP
) is larger than Nh(IP) in all the systems. The difference in the doping le
vel increases as total-carrier content delta and n increase. Imbalance betw
een Nh(OP) and Nh(IP) is suggested to be caused by a mechanism that the ele
ctrostatic potential associated with the apical oxygen has more attraction
for holes in the OP than in the IP. It is also suggested that T-c of Hg 122
3 (n = 3) is the highest (T-c = 133 K) to date, due to N-h(IP) optimized to
N-h.optimum similar to 0.2 From the fact that N-h(OP)> N-h.optimum, we pro
pose that if Nh(OP) could also be optimized in addition to optimized N-h(IP
). T-c might be raised higher than 133 K. (C) 2000 Elsevier Science Ltd. Al
l rights reserved.