Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors

Citation
Gj. Nott et al., Direct determination of Shockley-Read-Hall trap density in InSb/InAlSb detectors, J PHYS-COND, 12(50), 2000, pp. L731-L734
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
50
Year of publication
2000
Pages
L731 - L734
Database
ISI
SICI code
0953-8984(200012)12:50<L731:DDOSTD>2.0.ZU;2-4
Abstract
Accurate determination of trap density in the active region of mid-infrared narrow-bandgap detectors is crucial in the development towards background- limited performance at higher operating temperatures. We have used both opt ical and electrical measurements to determine the trap density in InSb/InAl Sb nonequilibrium detector structures. Both of these techniques result in v ery good agreement with trap densities of 5 x 10(14) cm(-3).