Accurate determination of trap density in the active region of mid-infrared
narrow-bandgap detectors is crucial in the development towards background-
limited performance at higher operating temperatures. We have used both opt
ical and electrical measurements to determine the trap density in InSb/InAl
Sb nonequilibrium detector structures. Both of these techniques result in v
ery good agreement with trap densities of 5 x 10(14) cm(-3).