One-dimensional probability density observed using scanned gate microscopy

Citation
R. Crook et al., One-dimensional probability density observed using scanned gate microscopy, J PHYS-COND, 12(50), 2000, pp. L735-L740
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
50
Year of publication
2000
Pages
L735 - L740
Database
ISI
SICI code
0953-8984(200012)12:50<L735:OPDOUS>2.0.ZU;2-4
Abstract
Using scanned gate microscopy, we observed transconductance structure relat ing to the transverse electron probability density of a quasi-one-dimension al electron system (Q1DES). The scanned gate created a movable scatterer to modify the transmission probability of the highest transmitted one-dimensi onal (1D) subband. Structure was seen for the first three 1D subbands, in a ddition to transconductance oscillations indicative of 1D ballistic transpo rt. The Q1DES was electrostatically defined from a subsurface two-dimension al electron system created at a GaAs/AlGaAs heterojunction. The Q1DES confi ning potential was modelled as flat in the middle with parabolic walls, and Schrodinger's equation solved numerically using a finite-difference method . Using this model, the experimental Q1DES width and 1D subband energy spac ings were deduced.