Using scanned gate microscopy, we observed transconductance structure relat
ing to the transverse electron probability density of a quasi-one-dimension
al electron system (Q1DES). The scanned gate created a movable scatterer to
modify the transmission probability of the highest transmitted one-dimensi
onal (1D) subband. Structure was seen for the first three 1D subbands, in a
ddition to transconductance oscillations indicative of 1D ballistic transpo
rt. The Q1DES was electrostatically defined from a subsurface two-dimension
al electron system created at a GaAs/AlGaAs heterojunction. The Q1DES confi
ning potential was modelled as flat in the middle with parabolic walls, and
Schrodinger's equation solved numerically using a finite-difference method
. Using this model, the experimental Q1DES width and 1D subband energy spac
ings were deduced.