The ability to directly image individual dislocation kinks (Kolar H er al 1
996 Phys. Rev. Lett. 77 4031) opens up many possibilities for the study of
kink dynamics by in situ TEM. Unfortunately, this technique is limited by s
urface roughness. For ceramics, however, high temperature annealing has bee
n found to produce inert and atomically smooth surfaces that even survive a
mbient pressures (Susnitzky D 1992 J. Am. Ceram. Sec. 75 2463). We have pre
pared such samples of 3C-SiC. in order to image kinks by the forbidden refl
ections method. Using multislice simulations for 30 and 90 degrees partial
dislocations in Si we show that not only the number of kinks along the disl
ocation core can be determined, but also their structure assuming an aberra
tion corrected TEM.
We also show how the recently proposed double period reconstruction along t
he 90 degrees partial dislocation in Si can easily be verified experimental
ly using convergent beam electron diffraction.