Theory of dislocations in diamond and silicon and their interaction with hydrogen

Citation
Mi. Heggie et al., Theory of dislocations in diamond and silicon and their interaction with hydrogen, J PHYS-COND, 12(49), 2000, pp. 10263-10270
Citations number
40
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
49
Year of publication
2000
Pages
10263 - 10270
Database
ISI
SICI code
0953-8984(200012)12:49<10263:TODIDA>2.0.ZU;2-5
Abstract
Dislocations in semiconductors can be strongly affected by a hydrogen plasm a; core states may be passivated and mobility changed. For example, in sili con the activation barrier For dislocation motion drops by 1.0 eV upon expo sure to H plasma for one hour at 470-540 degreesC. If such an effect were t o be found in diamond, a simple scaling argument would yield an activation energy of 1.9 eV. Here, density functional calculations have been applied t o the 90 degrees partial dislocation in diamond which confirm this predicti on. They also show that, energetically, the soliton model for motion of the 90 degrees partial is as viable as the strained-bond model.