Chemical bonding and structure of metastable impurity centers in semiconductor crystals

Citation
De. Onopko et Ai. Ryskin, Chemical bonding and structure of metastable impurity centers in semiconductor crystals, J STRUCT CH, 41(4), 2000, pp. 666-686
Citations number
96
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF STRUCTURAL CHEMISTRY
ISSN journal
00224766 → ACNP
Volume
41
Issue
4
Year of publication
2000
Pages
666 - 686
Database
ISI
SICI code
0022-4766(200007/08)41:4<666:CBASOM>2.0.ZU;2-V
Abstract
The properties of metastable impurity centers in semiconductor crystals [II I-V, Il-VI, IV-VI, and II-VII (CdF2)] are considered. Much attention has be en focused on modification of the chemical bond of a regular. crystal in th e presence of doping atoms and on the effect of this modification on the st ructure (including the electronic structure) of the impurity center. Same g eneral consistencies ii? reconstruction of the metastable impurity centers due to variation of their charged state are revealed.