The oxidation behavior of stoichiometric SiC fiber (Hi-Nicalon-S) was inves
tigated and compared with those of Nicalon and Hi-Nicalon fibers. Hi-Nicalo
n-S fiber was oxidized in Ar-O-2 gas mixtures with 25-100%O-2 at 1213-1773
K. The oxidation rates were measured with thermobalance experiments. The th
ickening in SiO2 film produced a large decrease in the strength of the as-o
xidized fiber. The SiO2 film-removed fiber (unoxidized core) retained high
strength independent of the SiO2 film thickness. The oxidation rate obeyed
the diffusion-controlled contracting-disc formula. The rate constant was pr
oportional to the oxygen partial pressure of Ar-O-2 gas mixture. The activa
tion energy was 79 kJ/mol. The oxidation rate was considered to be controll
ed by the diffusion of oxygen molecule through the micropores in SiO2 him.
Compared to Nicalon and Hi-Nicalon, Hi-Nicalon-S is resistant to oxidation
and has good strength in the oxidized state.