UHV-STM images on intercalated metal disulfide Ni1/4TiS2 and Ni1/3TiS2: influence of sulfur chemical surrounding

Authors
Martinez, H Auriel, C Pfister-Guillouzo, G
Citation
H. Martinez et al., UHV-STM images on intercalated metal disulfide Ni1/4TiS2 and Ni1/3TiS2: influence of sulfur chemical surrounding, MATER RES B, 35(10), 2000, pp. 1643-1651
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS RESEARCH BULLETIN
ISSN journal
00255408 → ACNP
Volume
35
Issue
10
Year of publication
2000
Pages
1643 - 1651
Database
ISI
SICI code
0025-5408(20000715)35:10<1643:UIOIMD>2.0.ZU;2-E
Abstract
The specific crystallographic features of Ni1/3TiS2 and Ni1/4TiS2 led us to carry out ultrahigh vacuum-scanning tunneling microscopy (UHV-STM) studies , in order to bring to light the different atom chemical environments of th e structure and the host-guest interactions. These compounds present specif ic structural reorganizations that involve, in particular, different chemic al surroundings for chalcogen atoms (the outer layer of the compounds). We imaged the top sulfur planes (001) for both compounds and propose an explan ation of the two well-differentiated contrasts observed. (C) 2000 Elsevier Science Ltd. All rights reserved.