TRANSITION FROM WEAK TO STRONG ELECTRONIC LOCALIZATION IN ICOSAHEDRALALPDRE

Authors
AHLGREN M RODMAR M GIGNOUX C BERGER C RAPP O
Citation
M. Ahlgren et al., TRANSITION FROM WEAK TO STRONG ELECTRONIC LOCALIZATION IN ICOSAHEDRALALPDRE, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 981-985
Citations number
18
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
226
Year of publication
1997
Pages
981 - 985
Database
ISI
SICI code
0921-5093(1997)226:<981:TFWTSE>2.0.ZU;2-C
Abstract
In this paper we investigate when the transition from weak to strong l ocalization takes place in icosahedral AlPdRe. This was made by determ ining an upper limit of the residual resistance ratio, RRR = rho(4.2 K )/rho(2.95 K), where theories of quantum interference effects (QIE) ca n account for the magnetoresistance in these materials. It was found t hat QIE can describe the magnetoresistance in samples with RRR up to a bout 10. For samples with higher RRR several observations strongly sug gest that other transport mechanisms have to be considered. (C) 1997 E lsevier Science S.A.