B. Gallas et al., Ellipsometric investigation of the Si/SiO2 interface formation for application to highly reflective dielectric mirrors, THIN SOL FI, 377, 2000, pp. 62-67
We present a study of the Si/SiO2 interface formation during the growth of
Si on SiO2 using in situ ellipsometry measurements performed at one wavelen
gth (lambda = 0.4 mum). Variable angle X-ray photoelectron spectroscopy (XP
S) is also used to confirm the ellipsometric measurements. In situ ellipsom
etry and XPS provide evidence for the formation of a SiOx (0 < x < 2) inter
layer between the SiO2 and Si layers. The variation of x with depth is anal
ysed from (cos Delta, tan psi) trajectories and the results obtained allow
reproduction of the spectroscopic ellipsometry spectra too. The effects of
the substrate temperature on the growth are investigated and show that the
higher the substrate temperature the larger the interface. The utilisation
of a SiO2/Si multilayer stack for elaborating an omnidirectional reflector,
angle-insensitive in the near infrared range, is also presented. (C) 2000
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