Effects of the addition of helium on the synthesis of diamond films

Citation
V. Baranauskas et al., Effects of the addition of helium on the synthesis of diamond films, THIN SOL FI, 377, 2000, pp. 182-187
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
377
Year of publication
2000
Pages
182 - 187
Database
ISI
SICI code
0040-6090(200012)377:<182:EOTAOH>2.0.ZU;2-H
Abstract
We present experimental results of chemical vapor deposition (CVD) diamond growth from ethanol vapor with the substitution of hydrogen by helium in co ncentrations varying from 0 to 95 vol.% He. Scanning electron microscopy (S EM) analysis revealed that the addition of helium to the gas phase influenc ed the growth rate and film structure. The deposition rate of diamond incre ases up to a helium concentration of 40 vol.% and then decreases. We attrib ute this behavior to an increase in the density of vacancies in the film or to a change in the reaction kinetics provoked by the chemical inertness of helium. Diamond films with well-defined crystalline facets and of good qua lity (measured by Raman spectroscopy) were obtained with the addition of up to 70 vol.% He. Use of helium also provokes an increase in film porosity, with the appearance of a strong room temperature photoluminescence with a G aussian peak at approximately 635 nm. The intensity of the luminescence inc reases with the concentration of helium and is probably related to nanoporo us defects introduced into the diamond structure. (C) 2000 Elsevier Science B.V. All rights reserved.