We present experimental results of chemical vapor deposition (CVD) diamond
growth from ethanol vapor with the substitution of hydrogen by helium in co
ncentrations varying from 0 to 95 vol.% He. Scanning electron microscopy (S
EM) analysis revealed that the addition of helium to the gas phase influenc
ed the growth rate and film structure. The deposition rate of diamond incre
ases up to a helium concentration of 40 vol.% and then decreases. We attrib
ute this behavior to an increase in the density of vacancies in the film or
to a change in the reaction kinetics provoked by the chemical inertness of
helium. Diamond films with well-defined crystalline facets and of good qua
lity (measured by Raman spectroscopy) were obtained with the addition of up
to 70 vol.% He. Use of helium also provokes an increase in film porosity,
with the appearance of a strong room temperature photoluminescence with a G
aussian peak at approximately 635 nm. The intensity of the luminescence inc
reases with the concentration of helium and is probably related to nanoporo
us defects introduced into the diamond structure. (C) 2000 Elsevier Science
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