Influence of sputtering power and the substrate-target distance on the properties of ZrO2 films prepared by RF reactive sputtering

ZrO2 films have been prepared by RF reactive sputtering using different sub strate-target distances and RF powers. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical s pectroscopy. Both monoclinic and tetragonal phases have been found in the f ilms. All the films show a random orientation. The crystallite size increas es as the substrate-target distance decreases and the RF power increases. I t has been found that the residual stress of the films is mainly caused by the intrinsic stress. Also, the influence of substrate-target distance and RF power on the optical properties of the films has been discussed. (C) 200 0 Elsevier Science B.V. All rights reserved.